Engineering Temperature‐Dependent Carrier Concentration in Bulk Composite Materials via Temperature‐Dependent Fermi Level Offset,Advanced Energy Materials

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Engineering Temperature‐Dependent Carrier Concentration in Bulk Composite Materials via Temperature‐Dependent Fermi Level Offset
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2017-09-14 , DOI: 10.1002/aenm.201701623
Si Hui ₁ , Wenpei Gao ₂ , Xu Lu ₃ , Anurag Panda ₄ , Trevor P. Bailey ₅ , Alexander A. Page ₅ , Stephen R. Forrest ₆ , Donald T. Morelli ₇ , Xiaoqing Pan ₈ , Kevin P. Pipe ₉ , Ctirad Uher ₅

Affiliation

Department of Mechanical Engineering; Department of Physics; University of Michigan; Ann Arbor MI 48109 USA
Department of Chemical Engineering and Materials Science; University of California; Irvine CA 92697 USA
Department of Chemical Engineering and Materials Science; Michigan State University; East Lansing MI 48824 USA
Department of Materials Science and Engineering; University of Michigan; Ann Arbor MI 48109 USA
Department of Physics; University of Michigan; Ann Arbor MI 48109 USA
Department of Physics; Department of Materials Science and Engineering; Department of Electrical Engineering and Computer Science; University of Michigan; Ann Arbor MI 48109 USA
Department of Chemical Engineering and Materials Science; Department of Physics and Astronomy; Michigan State University; East Lansing MI 48824 USA
Department of Chemical Engineering and Materials Science; Department of Physics and Astronomy; University of California; Irvine CA 92697 USA
Department of Mechanical Engineering; Department of Electrical Engineering and Computer Science; University of Michigan; Ann Arbor MI 48109 USA

Precise control of carrier concentration in both bulk and thin‐film materials is crucial for many solid‐state devices, including photovoltaic cells, superconductors, and high mobility transistors. For applications that span a wide temperature range (thermoelectric power generation being a prime example) the optimal carrier concentration varies as a function of temperature. This work presents a modified modulation doping method to engineer the temperature dependence of the carrier concentration by incorporating a nanosize secondary phase that controls the temperature‐dependent doping in the bulk matrix. This study demonstrates this technique by de‐doping the heavily defect‐doped degenerate semiconductor GeTe, thereby enhancing its average power factor by 100% at low temperatures, with no deterioration at high temperatures. This can be a general method to improve the average thermoelectric performance of many other materials.

中文翻译：

随温度变化的费米能级偏移，散装复合材料中的工程温度变化的载流子浓度

精确控制块状和薄膜材料中的载流子浓度对于许多固态设备至关重要，包括光伏电池，超导体和高迁移率晶体管。对于跨越宽温度范围的应用（热电发电就是一个很好的例子），最佳载流子浓度随温度的变化而变化。这项工作提出了一种改进的调制掺杂方法，通过在主体基质中掺入控制温度依赖性掺杂的纳米级次生相来设计载流子浓度的温度依赖性。这项研究通过对严重缺陷掺杂的简并半导体GeTe进行去掺杂，从而在低温下将其平均功率因数提高100％，而在高温下不会劣化，从而证明了该技术。

更新日期：2017-09-14

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