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Proving Scalability of an Organic Semiconductor To Print a TFT-Active Matrix Using a Roll-to-Roll Gravure
ACS Omega ( IF 3.7 ) Pub Date : 2017-09-14 00:00:00 , DOI: 10.1021/acsomega.7b00873
Junfeng Sun 1 , Hyejin Park 1 , Younsu Jung 1 , Grishmi Rajbhandari 1 , Bijendra Bishow Maskey 1 , Ashish Sapkota 1 , Yasuo Azuma 2 , Yutaka Majima 2 , Gyoujin Cho 1
Affiliation  

Organic semiconductor-based thin-film transistors’ (TFTs) charge-carrier mobility has been enhanced up to 25 cm2/V s through the improvement of fabrication methods and greater understanding of the microstructure charge-transport mechanism. To expand the practical feasibility of organic semiconductor-based TFTs, their electrical properties should be easily accessed from the fully printed devices through a scalable printing method, such as a roll-to-roll (R2R) gravure. In this study, four commercially available organic semiconductors were separately formulated into gravure inks. They were then employed in the R2R gravure system (silver ink for printing gate and drain–source electrodes and BaTiO3 ink for printing dielectric layers) for printing 20 × 20 TFT-active matrix with the resolution of 10 pixels per inch on poly(ethylene terephthalate) (PET) foils to attain electrical properties of organic semiconductors a practical printing method. Electrical characteristics (mobility, on–off current ratio, threshold voltage, and transconductance) of the R2R gravure-printed 20 × 20 TFT-active matrices fabricated with organic semiconducting ink were analyzed statistically, and the results showed more than 98% device yield and 50 % electrical variations in the R2R gravure TFT-active matrices along the PET web.

中文翻译:

验证有机半导体使用卷对卷凹版印刷可印刷TFT有源矩阵的可扩展性

通过改进制造方法和对微结构电荷传输机制的了解,有机半导体薄膜晶体管(TFT)的载流子迁移率已提高至25 cm 2 / V s。为了扩大基于有机半导体的TFT的实际可行性,应通过可缩放的印刷方法(例如卷对卷(R2R)凹版印刷)从完全印刷的设备中轻松访问其电特性。在这项研究中,将四种可商购的有机半导体分别配制到凹版印刷油墨中。然后将它们用于R2R凹版印刷系统(用于印刷栅电极和漏源电极的银油墨和BaTiO 3一种用于印刷20×20 TFT有源矩阵,分辨率为10像素/英寸的聚对苯二甲酸乙二酯(PET)箔,以实现有机半导体电性能的实用印刷方法。对使用有机半导体油墨制备的R2R凹版印刷的20×20 TFT有源矩阵的电学特性(迁移率,通断电流比,阈值电压和跨导)进行了统计分析,结果表明,器件良率超过98%, R2R凹版TFT有源矩阵沿PET纤网的电变化为50%。
更新日期:2017-09-14
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