Excessive cation injection into a resistive switching layer beyond the requirement of conductive filament formation, leads to deterioration of conductive-bridge random access memory (CBRAM) performance. The cation injection can be localized by inserting a nanohole graphene between the active electrode and resistive switching layer. The nanoscale localized cation injection, validated by conductive atomic force microscopy, gives rise to enhanced CBRAM performance.

中文翻译：

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限制阳离子注入以通过纳米孔石墨烯层增强CBRAM性能

超出导电丝形成要求，过多地将阳离子注入到电阻切换层中会导致导电桥随机存取存储器（CBRAM）性能下降。可以通过在活性电极和电阻性开关层之间插入纳米孔石墨烯来定位阳离子注入。通过导电原子力显微镜验证的纳米级局部阳离子注入提高了CBRAM性能。