Abstract In recent years, graphene (Gr) based solar cells have attracted extensive interest because of their ability to produce low cost and highly efficient solar cells. Conventional Gr/Si Schottky junction based solar cells are mostly fabricated by transfer of graphene on silicon substrate. In current work the direct growth of graphene by using the Plasma Enhanced Chemical Vapor Deposition (PECVD) technique was demonstrated to make fabrication more practical on a large scale. Firstly Gr/Si Schottky junction based solar cells were fabricated, and by optimizing the growth process, power conversion efficiency (PCE) of about 3.5% was achieved. Additionally, we demonstrated a metal insulator semiconductor (MIS) structure by introducing hafnium oxide (HfO2), and an enriched efficiency of 6.68% was reached. Furthermore, the chemical doping of Gr grown on top of HfO2 passivated Si was done and the efficiency was further enhanced by 8.5%. This study also suggests that the Voc of the Gr/HfO2/Si solar cells strongly depends on the thickness of the HfO2 interfacial layer. These solar cells proved reliable as their efficiency was still consistent even after four months. The current study envisions the use of graphene based solar cells for commercial application.

中文翻译：

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高介电氧化物作为界面层，增强了 Gr/Si 太阳能电池的光生 a

摘要 近年来，基于石墨烯（Gr）的太阳能电池因其能够生产低成本、高效率的太阳能电池而引起了广泛的兴趣。传统的基于 Gr/Si 肖特基结的太阳能电池主要通过在硅基板上转移石墨烯来制造。在目前的工作中，证明了使用等离子体增强化学气相沉积 (PECVD) 技术直接生长石墨烯可以使大规模制造更加实用。首先制作了基于Gr/Si肖特基结的太阳能电池，通过优化生长工艺，实现了约3.5%的功率转换效率（PCE）。此外，我们通过引入氧化铪 (HfO2) 展示了金属绝缘体半导体 (MIS) 结构，并达到了 6.68% 的富集效率。此外，对生长在 HfO2 钝化 Si 上的 Gr 进行化学掺杂，效率进一步提高了 8.5%。该研究还表明，Gr/HfO2/Si 太阳能电池的 Voc 强烈依赖于 HfO2 界面层的厚度。这些太阳能电池被证明是可靠的，因为即使在四个月后它们的效率仍然保持一致。目前的研究设想将基于石墨烯的太阳能电池用于商业应用。