The molecular precursors [Mo(S₂CNEt₂)₄] (1), [Re(S₂CC₆H₅)(S₃CC₆H₅)₂] (2), and [Re₂(μ-S)₂(S₂CNEt₂)₄] (3) were used to deposit thin films of Re-doped MoS₂ at 550 °C by aerosol assisted chemical vapour Deposition (AACVD). ICP-OES was used to quantify the amount of Re dopant in each film which range from ca. 2–17 at% Re, with greater incorporation of Re from films using precursor (3). In general, lightly doped films show evidence of elemental homogeneity and retention of structure from EDX spectroscopy mapping and p-XRD measurements. However, Raman spectroscopy suggests that the MoS₂ structure is lost upon heavy doping (ca. >4–7 at% Re) by the disappearance of the E_2g and A_1g optical phonons of MoS₂, which we attribute to the introduction of intralayer Re-Re bonding caused by the larger 5d orbitals of Re. Electron microscopy shows that inclusion of Re dopant atoms also dramatically influences the morphology of the films produced, ranging from lamellar structures to clusters and florets, though at similar doping level the morphologies are similar for films made from both Re precursors.

中文翻译：

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前驱体对rh通过气溶胶辅助化学气相沉积（AACVD）掺入Re-掺杂的MoS ₂（Mo _{1- x} Re _x S ₂）薄膜的影响

分子前体[Mo（S ₂ CNEt ₂）₄ ]（1），[Re（S ₂ CC ₆ H ₅）（S ₃ CC ₆ H ₅）₂ ]（2）和[Re ₂（μ-S）₂（S ₂ CNEt ₂）₄ ]（3）用于通过气溶胶辅助化学气相沉积（AACVD）在550°C沉积Re-掺杂的MoS ₂薄膜。ICP-OES用于量化每张膜中Re掺杂剂的量，范围从大约0。Re含量为2-17 at％，使用前体（3）可以使薄膜中的Re含量更高。通常，轻掺杂薄膜通过EDX光谱图和p-XRD测量显示出元素均质性和结构保留的证据。然而，拉曼光谱法表明，由于重掺杂（约> 4–7 at％Re），Mo ₂的E _2g和A _1g光学声子的消失会丢失MoS _2的结构。，这归因于Re的较大5d轨道引起的层内Re-Re键的引入。电子显微镜显示，掺入Re掺杂剂原子也极大地影响了所制得膜的形貌，从层状结构到簇和小花，尽管在相似的掺杂水平下，由两种precursor前体制得的膜的形貌均相似。