We have investigated the influence of relative humidity on the electrical response of a bottom gate organic field-effect transistor (OFET) with poly(3,4-ethylenedioxythiophene)/poly(4-styrene sulfonate) (PEDOT:PSS) as an active channel material. For sensor fabrication, the organic polymer PEDOT:PSS has been spun-cast on highly doped n-Si wafer with preliminary thermally deposited gold, source and drain electrodes. The structural characterization and surface morphology study of active layer has been performed by XRD and FESEM, respectively. From the transfer characteristic curve, the p-type hole conductivity in PEDOT:PSS thin film is confirmed. Whereas from the output current-voltage (I–V) characteristic of the OFET, the I_on/I_off ratio has been measured to be ∼2.6, when operated at relative humidity (RH) ∼60%. The humidity sensing characteristics of the OFET have further been investigated by exposing the proposed OFET to varied RH levels (40–80% RH) at room temperature (26.2 °C). Within the humidity range examined, the channel current has been observed to amplify by nearly 29.4 times of its magnitude.

我们已经研究了相对湿度对以聚（3,4-乙撑二氧噻吩）/聚（4-苯乙烯磺酸盐）（PEDOT：PSS）为有源沟道的底栅有机场效应晶体管（OFET）的电响应的影响材料。对于传感器的制造，有机聚合物PEDOT：PSS已通过预先热沉积的金，源极和漏极在高掺杂n-Si晶圆上进行了压铸。分别通过XRD和FESEM对活性层进行了结构表征和表面形貌研究。从传递特性曲线确认PEDOT：PSS薄膜中的p型空穴传导率。而从OFET的输出电流-电压（IV）特性来看，I _on / I _off当在相对湿度（RH）〜60％时，测得的比率为〜2.6。通过在室温（26.2°C）下将拟议的OFET暴露于变化的相对湿度水平（40-80％RH）中，进一步研究了OFET的湿度传感特性。在检查的湿度范围内，已观察到通道电流放大了近29.4倍。