Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO₂/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 10⁵ s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO₂/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.

研究了光催化辅助的多层氮掺杂还原氧化石墨烯（ML-NrGO）作为有前途的Al / PMMA / NrGO / SiO ₂ / p-Si / Au结构的电荷存储层。在±7 V的扫描电压下，约3.3 V的相当大的存储器窗口（ΔW）和长达约10 ⁵  s的长数据保留时间被证明是新兴的存储器层次结构的令人鼓舞的候选条件。顺时针方向的磁滞支持基于NrGO的结构中的空穴电荷捕获机制。ML-NrGO存储设备提供了快速编程，程序瞬变饱和，以较低成本存储更多数据以及减少了在垂直于NrGO的平面上的弹道传输的能力。基于ML–NrGO的Al / PMMA / NrGO / SiO的简便，可溶液处理，具有成本效益的器件处理以及稳定的保留₂ / p–Si / Au闪存结构被证明是现有基于EEPROM的嵌入式应用以及基于柔性有机电子产品的商业规模生产闪存的潜在替代方案。