We have designed and investigated electrical and optical properties of solution-processed organic field-effect transistors (OFETs) based on conjugated polymer PFO and perovskite –cesium lead halide nanocrystals (CsPbI₃) composite films. It was shown that OFETs based on PFO:CsPbI₃ films exhibit current-voltage (I-V) characteristics of OFETs with dominant hole transport and saturation current behavior at temperatures 200–300 K. It was found that PFO:CsPbI₃ OFETs have a negligible hysteresis of output and transfer characteristics especially at temperatures below 250 K. The values of the hole mobility estimated from I-Vs of PFO:CsPbI₃ OFETs were found to be ∼2.4 10⁻¹ cm²/Vs and ∼1.9 10⁻¹ cm²/Vs in saturation and low fields regimes respectively at 300 K; the hole mobility dropped down to ∼6 10⁻³ cm²/Vs and 2.8 10⁻³ cm²/Vs respectively at 200 K, and then down to 5.5 10⁻⁵ cm²/Vs at 100 K (in low field regime), which is characteristic of hopping conduction. The effect of sensitivity to light and light-emitting effect were found under application of negative source-drain and gate pulse voltages to PFO:CsPbI₃ OFETs at 300 K. The mechanism of charge carrier transport in OFETs based on PFO:CsPbI₃ hybrid films is discussed.

我们已经设计和研究了基于共轭聚合物PFO和钙钛矿-铯铯卤化铅纳米晶体（CsPbI ₃）复合膜的溶液处理有机场效应晶体管（OFET）的电学和光学特性。结果表明，基于PFO：CsPbI ₃薄膜的OFET具有在200-300 K的温度下具有主要空穴传输和饱和电流行为的OFET的电流-电压（IV）特性。发现PFO：CsPbI ₃ OFET的磁滞可忽略不计输出和传输特性的变化，尤其是在低于250 K的温度下。根据PFO：CsPbI ₃ OFET的I-Vs估算的空穴迁移率值约为2.4 10 ^-1  cm ² / Vs和1.9 10在300 K饱和和低场条件下分别为^-1  cm ² / Vs；空穴迁移率在200 K下分别下降至〜6 10 ^-3  cm ² / Vs和2.8 10 ^-3  cm ² / Vs，然后在100 K下下降至5.5 10 ^-5  cm ² / Vs（在低场条件下） ，这是跳跃传导的特征。在300 K的PFO：CsPbI ₃ OFET上施加负源极-漏极和栅极脉冲电压时，发现了对光的敏感性和发光效果的影响。基于PFO：CsPbI ₃杂化膜的OFET中的电荷载流子传输机理讨论。