Aluminum oxide (Al₂O₃) layers were deposited on various polymeric substrates by a low frequency plasma-enhanced atomic layer deposition (PEALD) process. Polyethylene naphthalate (PEN), polyethylene terephthalate (PET), and polyethersulfone (PES) were tested as substrates for barrier films. Each substrate has its own characteristics to have influences on the Al₂O₃ layer formation and penetration into the substrate, which greatly affected the barrier properties. Prior to the deposition process, polymeric substrates were pretreated in argon and oxygen plasmas, and surface energy was leveled up due to the formation of polar group. Characterizations of the Al₂O₃ layer by Time of Flight - Secondary Ion Mass Spectrometry (ToF-SIMS) revealed that plasma treatment lowered the level of OH⁻ in Al₂O₃ layer. X-ray photoelectron microscopy (XPS) confirmed that A12p peak of Al₂O₃ layer was shifted to a higher core level by plasma treatment. Density of the layer on the plasma treated surface was greater than that of untreated surface. It was found that plasma treatment of the surface had significant effects on the formation of the Al₂O₃ layer, which much improved the barrier performance. Optical transmittance was little affected by plasma treatment and PEALD process. After oxygen plasma pretreatment, the WVTR of the Al₂O₃ layer deposited on the plasma-treated PEN substrate was around 7.2 × 10⁻⁴ g/m²day, which is significantly lower than that of the untreated substrate.

通过低频等离子体增强原子层沉积（PEALD）工艺将氧化铝（Al ₂ O ₃）层沉积在各种聚合物基材上。测试了聚萘二甲酸乙二醇酯（PEN），聚对苯二甲酸乙二酯（PET）和聚醚砜（PES）作为阻隔膜的基材。每个基板都有其自身的特性，这些特性会影响Al ₂ O ₃层的形成和渗透到基板中，从而极大地影响了阻隔性能。在沉积过程之前，聚合物基材在氩气和氧气等离子中进行了预处理，并且由于形成了极性基团，表面能得以提高。Al ₂ O _3的表征通过飞行时间层-二次离子质谱法（TOF-SIMS）揭示，等离子体处理降低OH的水平^-以Al ₂ ö ₃层。X射线光电子显微镜（XPS）证实，通过等离子体处理，Al ₂ O ₃层的A12p峰移动到更高的核能级。经等离子体处理的表面上的层的密度大于未处理的表面上的层的密度。发现表面的等离子体处理对Al ₂ O ₃层的形成具有显着影响，这大大改善了阻挡性能。透光率几乎不受等离子体处理和PEALD工艺的影响。氧等离子体预处理后，Al的WVTR沉积在经等离子体处理的PEN基板上的₂ O ₃层约为7.2×10 ^-4  g / m ²天，这显着低于未处理的基板。