Abstract Copper films for printed circuit board applications have to be fine-grained to achieve even filling of vias. Electroplated Cu films on roll annealed Cu substrates may have unacceptably large epitaxial crystals. Here galvanic films were plated on oriented single-crystal Cu substrates from an additive-free electrolyte, as well as DC plating and pulse reverse (PR) plating with additives. The distribution of crystallite orientations was mapped with XRD and compared with the microstructure determined by SEM. For the additive-free bath on [1 1 1] and [1 0 0] oriented surfaces a gradual transition from epitaxial to polycrystalline is seen, while films on [1 1 0] substrates are persistently epitaxial. Without bath additives, twinning is the main mechanism for the transition to polycrystalline texture. For DC plating, additives (carriers, accelerators and levelers) promote fine-grained films with isotropic grain orientations, with films on [1 1 0] substrates being partially isotropic. Plating with carriers and accelerators (no leveler) yields films with many distinct crystallite orientations. These orientations result from up to five steps of recursive twinning. PR plating produces isotropic films with no or very few twins (〈1 1 1〉 and 〈1 0 0〉 substrates, respectively), while on 〈1 1 0〉 oriented surfaces the deposits are about 20% epitaxial.

中文翻译：

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[111]、[100] 和 [110] 取向铜表面上直流和脉冲电镀铜膜中的晶体生长模式

摘要 用于印刷电路板应用的铜膜必须是细粒度的，以实现过孔的均匀填充。滚压退火铜基板上的电镀铜膜可能具有不可接受的大外延晶体。在这里，从无添加剂的电解质以及直流电镀和带添加剂的脉冲反向 (PR) 电镀，在定向的单晶铜基板上电镀薄膜。用 XRD 绘制微晶取向的分布，并与由 SEM 确定的微观结构进行比较。对于 [1 1 1] 和 [1 0 0] 取向表面上的无添加剂浴，可以看到从外延到多晶的逐渐转变，而 [1 1 0] 衬底上的薄膜持续外延。在没有浴添加剂的情况下，孪晶是向多晶结构转变的主要机制。用于直流电镀、添加剂（载体、促进剂和整平剂）促进具有各向同性晶粒取向的细晶粒薄膜，[1 1 0] 基材上的薄膜部分各向同性。用载体和促进剂（无整平剂）电镀产生具有许多不同微晶取向的薄膜。这些方向由多达五个步骤的递归孪生产生。PR电镀产生没有或很少有孪晶的各向同性薄膜（分别为<1 1 1>和<1 0 0>衬底），而在<1 1 0>取向的表面上，沉积物大约为20%外延。