Abstract We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by chemical vapor deposition onto a poly- or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [1 0 0] direction resulting in large area crystals (up to ≈11 cm 2 ) with a thickness of up to approximately 850 μ m. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals.

中文翻译：

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使用 3C-SiC-on-Si (100) 晶种层升华生长块体 3C-SiC

摘要 我们开发了一种通过化学气相沉积在多晶或单晶 SiC 载体上生长的 3C-SiC-on-Si (1 0 0) 晶种层的转移工艺。随后在 [1 0 0] 方向上应用 SiC 的升华生长，产生厚度高达约 850 μm 的大面积晶体（高达 ≈11 cm 2 ）。拉曼光谱、劳厄 X 射线衍射和电子背散射衍射揭示了单结晶度方面的高材料质量，没有二次多型夹杂物、反相边界或双定位晶界。块状生长的 3C-SiC 中的缺陷，如具有周围应力区域的突起，源于外延晶种层。所提出的使用 3C-SiC-on-Si 晶种层的概念揭示了块状 3C-SiC 晶体的生长路径。