Abstract Compositionally graded InAlAs buffers grown by metal–organic chemical vapor deposition are impaired by phase separation occurring at In content higher than 35%. Phase separation results in rough epilayers with poor crystalline material quality. By introducing low temperature grown InGaAs interlayers in the compositionally graded InAlAs buffer, the surface roughness decreases, allowing a grading of up to In 0.60 Al 0.40 As without any phase separation occurring. This composite buffer is applied to fabricate a 200 mm diameter InP-on-Si virtual substrate with a threading dislocation density around 1 × 10 8 cm −2 .

中文翻译：

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使用 InGaAs 夹层在硅衬底上防止 MOCVD 生长的 InAlAs 成分梯度缓冲液中的相分离

摘要 通过金属有机化学气相沉积生长的成分梯度 InAlAs 缓冲液因 In 含量高于 35% 时发生相分离而受损。相分离导致粗糙的外延层具有较差的结晶材料质量。通过在成分渐变的 InAlAs 缓冲液中引入低温生长的 InGaAs 中间层，表面粗糙度降低，允许渐变至 In 0.60 Al 0.40 As，而不会发生任何相分离。该复合缓冲器用于制造直径为 200 mm 的 InP-on-Si 虚拟衬底，其螺纹位错密度约为 1 × 10 8 cm -2 。