Abstract Based on Grove theory, a kinetic model for MOCVD deposition of AlN film was proposed and built in this paper. Physical and chemical processes, e.g., gas phase transport, surface adsorption, surface chemical reactions, as well as the gas phase reactions in boundary layer were analyzed in the kinetic model. Based on this model, the effects of substrate temperature and chamber pressure on the growth rate of AlN film were investigated, as well as the corresponding mechanisms. Meanwhile, the dependences of AlN growth rate and temperature, pressure for three types of reaction pathways were also analyzed. The simulated results provide an important insight into the optimizing of AlN growth with appropriate temperature and pressure in experiment.

中文翻译：

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基于 Grove 理论的 AlN 薄膜 MOCVD 沉积动力学模型

摘要 本文基于格罗夫理论，提出并建立了AlN薄膜MOCVD沉积动力学模型。在动力学模型中分析了物理和化学过程，如气相传输、表面吸附、表面化学反应以及边界层中的气相反应。基于该模型，研究了衬底温度和腔室压力对AlN薄膜生长速率的影响，以及相应的机制。同时，还分析了AlN生长速率和温度、压力对三种反应途径的依赖性。模拟结果为在实验中以适当的温度和压力优化 AlN 生长提供了重要的见解。