Abstract We investigate effects of ion implantation on strain relaxation of SiGe(1 1 0) layers grown on Si(1 1 0) substrates. Ar + or Si + ion implantation is carried out before or after the SiGe growth. It is found that the strain relaxation of the SiGe(1 1 0) film is largely enhanced due to implantation-induced defects both for Ar and Si implantation. Particularly, the sample with Si implantation after the SiGe growth allows large strain relaxation and smaller surface roughness than Ar implantation. As a result, a 50-nm-thick Si 0.79 Ge 0.21 or Si 0.77 Ge 0.23 (1 1 0) buffer layer with almost full relaxation and rms surface roughness below 0.5 nm was obtained. It is, therefore, expected that high-mobility strained Si/Ge(1 1 0) channels can be realized on the SiGe(1 1 0) relaxed buffer layers fabricated by Si implantation. It is also demonstrated that the local introduction of the implantation defects allows controlling of lateral strain states and dislocation generation, opening new concepts of engineering of both strain and surface orientation.

中文翻译：

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通过离子注入控制缺陷制备高质量应变弛豫 SiGe(1 1 0) 薄膜

摘要 我们研究了离子注入对生长在 Si(1 1 0) 衬底上的 SiGe(1 1 0) 层应变弛豫的影响。在SiGe生长之前或之后进行Ar + 或Si + 离子注入。发现由于Ar和Si注入的注入引起的缺陷，SiGe(1 1 0)膜的应变弛豫大大增强。特别是，在 SiGe 生长后注入 Si 的样品允许比 Ar 注入更大的应变弛豫和更小的表面粗糙度。结果，获得了50nm厚的Si 0.79 Ge 0.21 或Si 0.77 Ge 0.23 (1 1 0)缓冲层，其几乎完全弛豫且rms表面粗糙度低于0.5 nm。因此，期望在通过Si注入制造的SiGe(1 1 0)松弛缓冲层上可以实现高迁移率应变Si/Ge(1 1 0)沟道。