Abstract In this work, the self-assembled GaAs based nano-hole formation prepared by droplet epitaxial technique is discussed. Here, a qualitative explanation is given why thermal solution cannot be observed under droplet edge and can only detected under droplet middle. The thermal etching takes place far from the droplet edge because of its special quantum mechanical state, which causes melting point increase at the droplet edge. Furthermore it is explained, why thermal solution is preferred under the middle of the droplet. Here, we give a lucid interpretation for the nano-hole formation dependence on the arsenic environment. It is evidenced, that the surrounded lobe initiative originates from the remained droplet edge. We give here a qualitative description why we need somewhat ambient arsenic for the process of nano-hole formation. The material transport needs arsenic ambient and not the thermal solution.

中文翻译：

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理解液滴外延纳米孔形成的几个方面

摘要 在这项工作中，讨论了液滴外延技术制备的自组装GaAs 基纳米孔的形成。在这里，给出了为什么在液滴边缘下无法观察到热解而只能在液滴中间下检测到的定性解释。由于其特殊的量子力学状态，热蚀刻发生在远离液滴边缘的地方，这会导致液滴边缘的熔点升高。此外还解释了为什么在液滴中间优选热溶液。在这里，我们对纳米孔形成对砷环境的依赖给出了清晰的解释。有证据表明，包围叶的主动性源于残留的液滴边缘。我们在这里定性地描述了为什么我们需要一些环境砷来形成纳米孔的过程。