Abstract The growth evolution of gold-catalyzed ZnTe nanowire condensates on (0 0 1) GaAs substrates is studied. The samples are obtained by molecular beam epitaxy. The growth of nanowires has been monitored in situ by RHEED and investigated ex-situ by TEM, SEM, XRD. In addition to nanowires sticking out of surface in 〈 1 1 1 〉 direction, formation ZnTe thin film is observed. It is found, that formation of the nanowire condensate occurs in three stages. At the initial stage of growth planar nanowires form and continue to grow in 〈 1 1 0 〉 direction until their intersection occurs. After the intersection, nanowires change the growth direction from planar to out-of-plane. At the final stage of growth in-plane nanowires coalescence forming a thin film. In addition to main reflections from ZnTe nanowires some oriented spots and rings have been observed on RHEED patterns. We attribute these spots to twin formation in nanowires and rings to a presence of disoriented domains in ZnTe film condensates.

中文翻译：

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通过 MBE 在 (0 0 1) GaAs 上成核和形成 Au 催化的 ZnTe 纳米线：从平面到面外生长

摘要 研究了金催化的ZnTe 纳米线凝聚物在(0 0 1) GaAs 衬底上的生长演变。样品通过分子束外延获得。纳米线的生长已通过 RHEED 原位监测，并通过 TEM、SEM、XRD 进行异位研究。除了沿< 1 1 1 > 方向伸出表面的纳米线外，还观察到形成ZnTe 薄膜。发现，纳米线凝聚物的形成分三个阶段发生。在生长的初始阶段，平面纳米线形成并继续沿< 1 1 0 > 方向生长，直到它们相交。相交后，纳米线将生长方向从平面变为平面外。在生长的最后阶段，面内纳米线聚结形成薄膜。除了来自 ZnTe 纳米线的主要反射之外，在 RHEED 图案上还观察到了一些定向的点和环。我们将这些斑点归因于纳米线和环中的孪晶形成，这是因为 ZnTe 薄膜凝聚物中存在无取向的域。