Abstract Molecular-beam-epitaxy (MBE) and atomic-layer-deposition (ALD) high-κ HfO 2 dielectrics have been in - situ deposited on MBE-grown pristine p - and n -In 0.53 Ga 0.47 As(0 0 1). The HfO 2 /In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOSCAPs) from both methods all exhibit excellent capacitance-voltage ( C - V ) characteristics with true inversion and low leakage current densities. Moreover, interfacial trap densities ( D it ’s) with no discernible peaks at the mid-gap were measured using the temperature-dependent conductance method. Both HfO 2 /InGaAs hetero-structures have exhibited outstanding thermal stabilities to 800 °C.

中文翻译：

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使用分子束外延和原子层沉积 HfO 2 对 In 0.53 Ga 0.47 As(0 0 1) 进行有效表面钝化 – 比较研究

摘要 在 MBE 生长的原始 p - 和 n -In 0.53 Ga 0.47 As(0 0 1) 上原位沉积了分子束外延 (MBE) 和原子层沉积 (ALD) 高 κ HfO 2 电介质. 来自这两种方法的 HfO 2 /In 0.53 Ga 0.47 As 金属氧化物半导体电容器 (MOSCAP) 都表现出出色的电容电压 ( C - V ) 特性，具有真正的反转和低漏电流密度。此外，使用温度相关电导方法测量在中间间隙没有可辨别峰的界面陷阱密度 (D it 's)。HfO 2 /InGaAs 异质结构在 800 °C 时都表现出出色的热稳定性。