Abstract We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleation layer. In particular, we investigate the influence of the AlSb layer thickness when this nucleation layer is grown at low temperature (400 °C). X-ray diffraction techniques, atomic force microscopy and transmission electron microscopy were used to characterize the material properties. We demonstrate that there exists a correlation between the micro-twin density, the surface roughness and the broadening of the ω-scan GaSb peaks. Moreover, the AlSb thickness has a strong influence on the micro-twin density, and must be carefully optimized to improve the GaSb quality.

中文翻译：

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通过低温 AlSb 成核层在相邻硅衬底上通过分子外延生长的锑化物基材料的表征

摘要 我们报告了使用 AlSb 成核层在硅衬底上生长的 GaSb 层的表征。特别是，我们研究了在低温 (400 °C) 下生长该成核层时 AlSb 层厚度的影响。X射线衍射技术、原子力显微镜和透射电子显微镜被用来表征材料特性。我们证明了微孪晶密度、表面粗糙度和 ω 扫描 GaSb 峰的加宽之间存在相关性。此外，AlSb 厚度对微孪晶密度有很大影响，必须仔细优化以提高 GaSb 质量。