Abstract We report on the growth by solid-source MBE of random-alloy AlxIn1–xAsySb1–y layers lattice-matched to (0 0 1)–GaSb substrates, with xAl ∈ [0.25; 0.75]. The samples quality and morphology were characterized by X-ray diffraction, Nomarski microscopy and atomic force microscopy. Layers grown at 400 °C demonstrated smooth surfaces and no sign of phase decomposition. Samples with xAl ≤ 0.60 demonstrated photoluminescence (PL) at 300 K whereas samples with higher Al content only demonstrated PL at low temperature. Samples grown at 430 °C, in contrast, exhibited PL at low temperature only, whatever their composition. Inferred bandgap energies corroborate the estimation of a non-null quaternary bowing parameter made by Donati, Kaspi and Malloy in Journal of Applied Physics 94 (2003) 5814. Upon annealing, the PL peak energies increased, getting even closer to the theoretical values. These results are in agreement with recently published results on digital AlInAsSb alloys. Our work, which reports the first evidence for PL emission from random-alloy AlInAsSb layers lattice-matched to GaSb, opens the way to their use in optoelectronic devices.

中文翻译：

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与 GaSb 晶格匹配的 AlInAsSb 层的生长和表征

摘要 我们报告了通过固体源 MBE 生长与 (0 0 1)-GaSb 衬底晶格匹配的随机合金 AlxIn1-xAsySb1-y 层，xAl ∈ [0.25; 0.75]。样品的质量和形貌通过 X 射线衍射、Nomarski 显微镜和原子力显微镜表征。在 400 °C 下生长的层表现出光滑的表面并且没有相分解的迹象。xAl ≤ 0.60 的样品在 300 K 下表现出光致发光 (PL)，而具有较高 Al 含量的样品仅在低温下表现出 PL。相比之下，在 430 °C 下生长的样品仅在低温下表现出 PL，无论其成分如何。推断的带隙能量证实了 Donati、Kaspi 和 Malloy 在 Journal of Applied Physics 94 (2003) 5814 中对非零四元弯曲参数的估计。退火后，PL 峰值能量增加，更接近理论值。这些结果与最近发表的关于数字 AlInAsSb 合金的结果一致。我们的工作报告了与 GaSb 晶格匹配的随机合金 AlInAsSb 层的 PL 发射的第一个证据，为它们在光电器件中的使用开辟了道路。