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Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2017-11-01 , DOI: 10.1016/j.jcrysgro.2017.03.048
O. Delorme , L. Cerutti , E. Tournié , J.-B. Rodriguez

Abstract The epitaxial growth, structural and optical properties of GaSb 1−x Bi x layers are reported. The incorporation of Bi into GaSb is varied in the 0

中文翻译:

高Bi含量GaSbBi合金的分子束外延和表征

摘要 报道了 GaSb 1-x Bi x 层的外延生长、结构和光学特性。Bi 掺入 GaSb 在 0
更新日期:2017-11-01
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