Abstract In the paper the whole heterojunction structure design process in LWIR type-II InAs/GaSb superlattices (T2SLs) detectors has been presented. The high quality T2SLs materials were grown and the high performance double heterojunction LWIR detectors have been fabricated. In the double heterojunction LWIR detectors a electrons barrier layer and a holes barrier layer were designed and introduced successively, based on the electrical properties measurement and compensation doping of the T2SLs intrinsic material. The processed double heterojunction structure photodiodes had a 100% cutoff wavelength of 12.5 μm at 80 K. The peak current responsivity was 2.5 A/W under zero applied bias, corresponding to a quantum efficiency of 30%. The R 0 A product at 80 K is 14.5 Ω cm 2 which leads to the peak detectivity D ∗ of 1.4 × 10 11 cm Hz 1/2 /W for the detector.

中文翻译：

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具有势垒结构的 II 型 InAs/GaSb 超晶格 LWIR 材料和光电探测器的 MBE 生长和表征

摘要 本文介绍了长波红外 II 型 InAs/GaSb 超晶格 (T2SL) 探测器中异质结结构的整个设计过程。生长了高质量的 T2SLs 材料并制造了高性能的双异质结 LWIR 探测器。在双异质结长波红外探测器中，基于T2SLs本征材料的电学性能测量和补偿掺杂，依次设计并引入了电子势垒层和空穴势垒层。处理后的双异质结结构光电二极管在 80 K 下的 100% 截止波长为 12.5 μm。在零施加偏压下的峰值电流响应率为 2.5 A/W，对应于 30% 的量子效率。80 K 下的 R 0 A 乘积为 14.5 Ω cm 2，这导致峰值检测率 D ∗ 为 1。