Abstract The surface morphology of GaSb was investigated by changing growth conditions such as thermal oxide desorption temperature, growth temperature, and growth step by solid source molecular beam epitaxy. At high temperature growth, the pits caused by the thermal oxide desorption remained in the GaSb buffer layer surface, while the surface was sufficiently flattened. At low temperature growth, the pits disappeared, while the surface was not enough flattened even in the case of step-flow mode growth. Since the pits disappeared at lower growth temperature regardless of the growth mode, this behavior might be explained by the Ga migration length depending on the growth temperature. By applying two-step high/low temperature growth, where both growth steps proceed in step-flow mode, flat, a pit-free GaSb buffer surface could be obtained.

中文翻译：

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两步高低温生长对GaSb缓冲层表面形貌的改善

摘要 通过改变热氧化物解吸温度、生长温度和固体源分子束外延生长步骤等生长条件，研究了GaSb的表面形貌。在高温生长时，由热氧化物解吸引起的凹坑保留在 GaSb 缓冲层表面，而表面充分平整。在低温生长时，凹坑消失了，而即使在阶梯流模式生长的情况下，表面也不够平整。由于无论生长模式如何，凹坑都会在较低的生长温度下消失，因此这种行为可能是由依赖于生长温度的 Ga 迁移长度来解释的。通过应用两步高/低温生长，其中两个生长步骤都以阶梯流模式进行，可以获得平坦、无坑的 GaSb 缓冲表面。