Abstract In this work, we demonstrate a self-assisted VLS growth of GaAs nanowires directly on GaAs (111)B substrates without assistance of SiO 2 layer. We believe that with this technique, we can overcome some inherent problems that usually occur in conventional self-assisted VLS growth and simplify the process. Moreover, to study the effect of substrate temperature, each nanowire sample was fabricated at the different temperature from 400 °C to 600 °C using Molecular Beam Epitaxy (MBE) technique. Surface morphology, elemental composition, and crystal structure of nanowire samples were characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD) respectively.

中文翻译：

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衬底温度对无SiO 2 层的GaAs (111)B衬底上分子束外延自辅助GaAs纳米线的影响

摘要 在这项工作中，我们展示了直接在 GaAs (111)B 衬底上自辅助 VLS 生长 GaAs 纳米线，而无需 SiO 2 层的帮助。我们相信，通过这种技术，我们可以克服传统自辅助 VLS 生长中通常出现的一些固有问题并简化过程。此外，为了研究基板温度的影响，使用分子束外延 (MBE) 技术在 400°C 到 600°C 的不同温度下制造每个纳米线样品。纳米线样品的表面形貌、元素组成和晶体结构分别通过扫描电子显微镜 (SEM)、能量色散 X 射线光谱 (EDX) 和 X 射线衍射分析 (XRD) 进行表征。