Abstract This work provides a comprehensive study of the incorporation behavior of B in growing GaAs under molecular beam epitaxy conditions. Structural characterization of superlattices revealed a strong dependence of the BAs growth rate on the GaAs growth rate used. In general, higher GaAs growth rates lead to a higher apparent BAs growth rate, although lower B cell temperatures showed saturation behavior. Each B cell temperature requires a minimum GaAs growth rate for producing smooth films. The B incorporation into single thick layers was found to be reduced to 75–80% compared to superlattice structures. The p-type carrier densities in 1000 nm thick layers were found to be indirectly proportional to the B content. Furthermore, 500 nm thick B x Ga 1−x As layers showed significantly lower carrier concentrations, indicating B segregation on the surface during growth of thicker layers.

中文翻译：

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硼掺入 B x Ga 1-x As 层的生长速率依赖性

摘要 这项工作对分子束外延条件下生长 GaAs 中 B 的掺入行为进行了全面研究。超晶格的结构表征揭示了 BAs 生长速率对所使用的 GaAs 生长速率的强烈依赖性。一般来说，较高的 GaAs 生长速率导致较高的 BAs 表观生长速率，尽管较低的 B 电池温度显示出饱和行为。每个 B 电池温度都需要一个最小的 GaAs 生长速率来生产光滑的薄膜。与超晶格结构相比，B 并入单个厚层被发现减少到 75-80%。发现 1000 nm 厚层中的 p 型载流子密度与 B 含量间接成正比。此外，500 nm 厚的 B x Ga 1-x As 层显示出显着较低的载流子浓度，