Abstract We present an initial study of the influence of the growth parameters on the surface morphology and on the interface quality of homoepitaxial GaP(1 1 1) and heteroepitaxial GaP/AlGaP(1 1 1) grown on GaP(1 1 1)B substrates using Gas-Source Molecular Beam Epitaxy (GSMBE). Three different surface reconstructions are identified in the RHEED patterns during the growth runs. The Root Mean Square (RMS) surface roughness measured post-growth by AFM ranges from 3 to 10 nm over 10 × 10 µm 2 areas, for a film thickness of 100–600 nm. The results of 2θ-ω XRD scans on (1 1 1) and (3 1 1) planes reveal a stacking disorder in the AlGaP layer and further XRD phi-scan measurements on GaP (3 1 1) show strong peaks with 3-fold rotational symmetry and additional of 3-fold weak peaks indicating only a negligible fraction of the twinned crystal orientation in the substrate. TEM images of these samples show a smooth interface between the AlGaP layer and GaP substrate, and reveal the presence of a high density of extended defects such as stacking faults, twinning and dislocations lines in AlGaP layer whereas the GaP layer appears as pure Zinc-Blende. Further TEM analysis reveals composition and local strain variations for GaP/AlGaP samples associated with an undulated surface.

中文翻译：

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使用气源分子束外延在 GaP(1 1 1)B 上生长 GaP 和 AlGaP

摘要 我们初步研究了生长参数对在 GaP(1 1 1)B 衬底上生长的同质外延 GaP(1 1 1) 和异质外延 GaP/AlGaP(1 1 1) 的表面形貌和界面质量的影响。使用气源分子束外延 (GSMBE)。在生长运行期间，在 RHEED 图案中识别出三种不同的表面重建。对于 100–600 nm 的薄膜厚度，通过 AFM 测量生长后的均方根 (RMS) 表面粗糙度在 10 × 10 µm 2 区域范围为 3 到 10 nm。在 (1 1 1) 和 (3 1 1) 平面上的 2θ-ω XRD 扫描结果揭示了 AlGaP 层中的堆叠无序，并且对 GaP (3 1 1) 的进一步 XRD phi 扫描测量显示了 3 倍的强峰旋转对称性和额外的 3 倍弱峰表明基板中孪晶取向的比例可以忽略不计。这些样品的 TEM 图像显示了 AlGaP 层和 GaP 衬底之间的平滑界面，并揭示了在 AlGaP 层中存在高密度扩展缺陷，例如堆垛层错、孪晶和位错线，而 GaP 层表现为纯闪锌矿. 进一步的 TEM 分析揭示了与起伏表面相关的 GaP/AlGaP 样品的成分和局部应变变化。并揭示了在 AlGaP 层中存在高密度扩展缺陷，例如堆垛层错、孪晶和位错线，而 GaP 层表现为纯闪锌矿。进一步的 TEM 分析揭示了与起伏表面相关的 GaP/AlGaP 样品的成分和局部应变变化。并揭示了在 AlGaP 层中存在高密度扩展缺陷，例如堆垛层错、孪晶和位错线，而 GaP 层表现为纯闪锌矿。进一步的 TEM 分析揭示了与起伏表面相关的 GaP/AlGaP 样品的成分和局部应变变化。