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Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors
Journal of Crystal Growth ( IF 1.7 ) Pub Date : 2017-11-01 , DOI: 10.1016/j.jcrysgro.2017.02.030
Mikhail Patrashin , Kouichi Akahane , Norihiko Sekine , Iwao Hosako

Abstract We report on the growth and characterization of strained-layer InAs/Ga 1− x In x Sb superlattices for long-wavelength photodetectors. The thickness and alloy composition x

中文翻译:

用于长波长光电探测器的应变层 InAs/GaInSb 超晶格的分子束外延

摘要 我们报告了用于长波长光电探测器的应变层 InAs/Ga 1− x In x Sb 超晶格的生长和表征。厚度和合金成分 x
更新日期:2017-11-01
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