Abstract In this paper, the sintering behavior and microstructural evolution of as-prepared monodispersed β-Ga2O3 micro-ellipsoid particles (E-G), β-Ga2O3 micro-rods particles (R-G) and as-received commercial β-Ga2O3 particles (C-G) were investigated. The XRD analysis showed that the main peak (−202) of E-G and R-G ceramics sintered at elevated temperature, ascribed to the lowest surface energy of the (−202) crystal surface. The in-situ high temperature optical dilatometer analysis revealed that, compared with C-G, the monodispersed E-G and R-G had higher sintering activity with a more uniform particle size and a smaller aspect ratio and the densification temperature of as-prepared β-Ga2O3 was reduced by over 100 °C. The highest density of E-G, R-G and C-G ceramics were 5.96 g/cm3 sintered at 1400 °C, 5.98 g/cm3 sintered at 1450 °C and 5.89 g/cm3 sintered at 1550 °C, respectively. Differential densification and subsequent separation of the pores from the boundaries led to the lower density of C-G ceramics. Due to a higher sintering activity, E-G and R-G ceramics had larger grains than those of C-G ceramics sintered at the same temperature. Furthermore, the sintering temperature had an important effect on the microstructure and weight losses of sintered Ga2O3 ceramics. Finally, the high-density target obtained using Ga2O3 particles with uniform size as the raw materials exhibited promising industrial applications for optoelectronic devices.

中文翻译：

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不同形貌和尺寸的单分散β-氧化镓微粒的烧结行为和微观结构演变

摘要 在本文中，制备的单分散 β-Ga2O3 微椭球颗粒 (EG)、β-Ga2O3 微棒颗粒 (RG) 和原样商业化 β-Ga2O3 颗粒 (CG) 的烧结行为和微观结构演变进行了研究。调查。XRD 分析表明 EG 和 RG 陶瓷的主峰 (-202) 在升高的温度下烧结，归因于 (-202) 晶体表面的最低表面能。原位高温光学膨胀仪分析表明，与CG相比，单分散的EG和RG具有更高的烧结活性，粒径更均匀，纵横比更小，制备的β-Ga2O3的致密化温度降低了超过 100°C。EG、RG 和 CG 陶瓷的最高密度为 5.96 g/cm3 在 1400 °C 下烧结，5.98 g/cm3 在 1450 °C 下烧结和 5。89 g/cm3 分别在 1550 °C 下烧结。不同的致密化和随后的孔隙与边界的分离导致 CG 陶瓷的密度较低。由于具有更高的烧结活性，EG 和 RG 陶瓷的晶粒比在相同温度下烧结的 CG 陶瓷大。此外，烧结温度对烧结 Ga2O3 陶瓷的微观结构和重量损失有重要影响。最后，以均匀尺寸的 Ga2O3 颗粒为原料获得的高密度靶材在光电器件方面具有广阔的工业应用前景。在相同温度下烧结的 EG 和 RG 陶瓷比 CG 陶瓷具有更大的晶粒。此外，烧结温度对烧结 Ga2O3 陶瓷的微观结构和重量损失有重要影响。最后，以均匀尺寸的 Ga2O3 颗粒为原料获得的高密度靶材在光电器件方面具有广阔的工业应用前景。在相同温度下烧结的 EG 和 RG 陶瓷比 CG 陶瓷具有更大的晶粒。此外，烧结温度对烧结 Ga2O3 陶瓷的微观结构和重量损失有重要影响。最后，以均匀尺寸的 Ga2O3 颗粒为原料获得的高密度靶材在光电器件方面具有广阔的工业应用前景。