The piezotronic effect and piezo-phototronic effect on materials and devices have been widely studied in binary semiconductors. Wide-band ternary semiconductors are a great class of materials with potential application in nano/microdevices, because of their continuously tunable physical properties with composition. Here, we first demonstrate the piezo-photronics effect of ternary wurtzite structured nanowires (NWs), opening an innovative materials system. Single-crystal ternary CdS_xSe_1–x (x = 0.85, 0.60, and 0.38) NWs were synthesized with site-controlled compositions via a chemical vapor deposition process, and high-performance visible photodetectors (PDs) with fast response speed (<2 ms), high photosensitivity, high responsivity, and broadened photoresponse region (than CdS NW) were fabricated based on these ternary materials. By introducing an external tensile strain, the performance of PDs is enhanced by 76.7% upon 0.2 mW/cm² 442 nm light illumination for CdS_0.85Se_0.15 by the piezo-phototronic effect. The composition effect of materials in ternary materials on light detecting and piezo-phototronics was also first investigated systematically. The results indicate that in the CdS_xSe_1–x system, as the value of x decreases, the photocurrent and responsivity experience an increase, while the enhancement of the piezo-phototronic effect was weakened. The change in piezoelectric coefficient and carrier screening effect are proposed for the observed phenomenon. This study reports a high-quality ternary CdS_xSe_1–x NWs system used for high-performance PDs, broadens the family of piezotronic materials, offers an innovative material for high-performance visible PD, and provides a new pathway to modulate the performance of piezo-phototronic devices by tuning the atomic ratios of ternary wurtzite semiconducting materials. This is essential for developing a full understanding of piezotronics on a broader scope, and it also enables the development of the better performance of optoelectronic devices.

中文翻译：

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基于成分可调三元CdS _x Se _{1– x}纳米线的压电效应增强光子传感器的响应度

对材料和器件的压电效应和压电效应已经在二元半导体中得到了广泛的研究。宽带三元半导体是一类重要的材料，因为它们的成分可以连续调节，因此它们在纳米/微器件中具有潜在的应用前景。在这里，我们首先展示三元纤锌矿结构纳米线（NWs）的压电效应，从而打开了创新的材料系统。单晶三元CdS _x Se _{1– x}（x= 0.85、0.60和0.38）NW是通过化学气相沉积工艺与定点控制的成分合成的，并且具有响应速度快（<2 ms），高光敏性，高响应度和加宽的高性能可见光探测器（PD）基于这些三元材料制造了光响应区域（比CdS NW更大）。通过引入外部拉伸应变，通过压电效应，在CdS _0.85 Se _0.15的0.2 mW / cm ² 442 nm光照下，PD的性能提高了76.7％。还首先系统地研究了三元材料中的材料组成对光检测和压电光电的影响。结果表明，在CdS _x Se _{1– x中}当x的值减小时，光电流和响应度会增加，而压电效应的增强会减弱。针对观察到的现象提出了压电系数的变化和载流子屏蔽效应。这项研究报告了高质量的三元CdS _x Se _{1– x}用于高性能PD的NWs系统，拓宽了压电材料的范围，为高性能可见光PD提供了创新的材料，并提供了通过调节三元纤锌矿型半导体原子比来调节压电光电器件性能的新途径材料。这对于在更广泛的范围内全面了解压电具有至关重要的作用，并且还可以使光电器件的性能更好。