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Adsorption and Photodesorption of CO from Charged Point Defects on TiO2(110)
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2017-09-12 00:00:00 , DOI: 10.1021/acs.jpclett.7b02052 Rentao Mu 1, 2 , Arjun Dahal 3 , Zhi-Tao Wang 3 , Zdenek Dohnálek 1, 4 , Greg A. Kimmel 1 , Nikolay G. Petrik 1 , Igor Lyubinetsky 1
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2017-09-12 00:00:00 , DOI: 10.1021/acs.jpclett.7b02052 Rentao Mu 1, 2 , Arjun Dahal 3 , Zhi-Tao Wang 3 , Zdenek Dohnálek 1, 4 , Greg A. Kimmel 1 , Nikolay G. Petrik 1 , Igor Lyubinetsky 1
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The adsorption and photochemistry of CO on rutile TiO2(110) are studied with scanning tunneling microscopy (STM), temperature-programmed desorption, and angle-resolved photon-stimulated desorption (PSD) at low temperatures. Site occupancies, when weighted by the concentration of each kind of adsorption site on the reduced surface, show that the adsorption probability is the highest for the bridging oxygen vacancies (VO). The probability distribution for the different adsorption sites corresponds to very small differences in CO adsorption energies (<0.02 eV). UV irradiation stimulates diffusion and desorption of CO at low temperature. CO photodesorbs primarily from the vacancies with a bimodal angular distribution, indicating some scattering from the surface, which also leads to photostimulated diffusion. Hydroxylation of VO’s does not significantly change the CO PSD yield or the angular distribution, which suggests that photodesorption can be initiated by recombination of photogenerated holes with excess electrons localized near the charged point defect (either VO or bridging hydroxyl).
中文翻译：
TiO 2（110）上带电点缺陷对CO的吸附和光解吸
利用扫描隧道显微镜（STM），程序升温脱附和在低温下角分解光子刺激脱附（PSD）研究了金红石TiO 2（110）上CO的吸附和光化学。位置占用率按还原表面上每种吸附位置的浓度加权时，表明架桥氧空位的吸附概率最高（V O）。不同吸附位点的概率分布对应于CO吸附能的非常小的差异（<0.02 eV）。紫外线辐射可在低温下刺激CO的扩散和解吸。CO主要从空位以双峰角度分布进行光解吸，表明表面有一些散射，这也导致了光刺激的扩散。V O的羟基化不会显着改变CO PSD的产率或角度分布，这表明光解吸可以通过光生空穴与位于带电点缺陷附近的过量电子（V O或桥连羟基）的复合而引发。
更新日期：2017-09-12
中文翻译：
TiO 2（110）上带电点缺陷对CO的吸附和光解吸
利用扫描隧道显微镜（STM），程序升温脱附和在低温下角分解光子刺激脱附（PSD）研究了金红石TiO 2（110）上CO的吸附和光化学。位置占用率按还原表面上每种吸附位置的浓度加权时，表明架桥氧空位的吸附概率最高（V O）。不同吸附位点的概率分布对应于CO吸附能的非常小的差异（<0.02 eV）。紫外线辐射可在低温下刺激CO的扩散和解吸。CO主要从空位以双峰角度分布进行光解吸，表明表面有一些散射，这也导致了光刺激的扩散。V O的羟基化不会显着改变CO PSD的产率或角度分布，这表明光解吸可以通过光生空穴与位于带电点缺陷附近的过量电子（V O或桥连羟基）的复合而引发。
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