III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. We consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.

中文翻译：

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用于光伏应用的低成本III-V半导体增长方法

III–V半导体构成了最有效的单结和多结光伏电池。使用有毒和发火气相前驱体的金属有机气相外延是这些材料的主要商业生产方法。为了随着对可再生电力需求的增长而扩展基于III-V的高效设备的使用，需要一种低成本的方法来增加这些材料的生长。本文将重点介绍与当前器件架构兼容的三种沉积技术：氢化物气相外延，近距离蒸汽传输以及薄膜气液固相生长。我们考虑了每种技术的最新进展，包括可用的材料空间，