Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors,Nano Letters

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Strain-Modulated Bandgap and Piezo-Resistive Effect in Black Phosphorus Field-Effect Transistors
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-11 00:00:00 , DOI: 10.1021/acs.nanolett.7b02624
Zuocheng Zhang , Likai Li ₁ , Jason Horng ₁ , Nai Zhou Wang ₂ , Fangyuan Yang , Yijun Yu , Yu Zhang , Guorui Chen ₁ , Kenji Watanabe ₃ , Takashi Taniguchi ₃ , Xian Hui Chen ₂ , Feng Wang _{1,

4,

5} , Yuanbo Zhang ₂

Affiliation

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be modulated by the number of layers; as a result, few-layer black phosphorus has discrete bandgap values that are relevant for optoelectronic applications in the spectral range from red, in monolayer, to mid-infrared in the bulk limit. Here, we further demonstrate continuous bandgap modulation by mechanical strain applied through flexible substrates. The strain-modulated bandgap significantly alters the density of thermally activated carriers; we for the first time observe a large piezo-resistive effect in black phosphorus field-effect transistors (FETs) at room temperature. The effect opens up opportunities for future development of electromechanical transducers based on black phosphorus, and we demonstrate an ultrasensitive strain gauge constructed from black phosphorus thin crystals.

中文翻译：

黑磷场效应晶体管中的应变调制带隙和压电电阻效应

能带隙在很大程度上决定了半导体的光学和电子性能。因此，可变带隙使得在单一材料中实现通用功能成为可能。在层状材料黑磷中，带隙可以通过层数进行调节；结果，很少层的黑磷具有离散的带隙值，该带隙值与光电应用有关的光谱范围从红色（单层）到中红外（在体积限制范围内）。在这里，我们进一步展示了通过柔性基板施加的机械应变实现的连续带隙调制。应变调制的带隙显着改变了热激活载流子的密度。我们首次在室温下在黑磷场效应晶体管（FET）中观察到了很大的压阻效应。

更新日期：2017-09-12

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