A rising forming voltage issue with scaling‐down resistive random access memory (RRAM) device cells is successfully solved by introducing new high‐permittivity (high‐k) material as the side‐wall spacer structure. As reported by Ting‐Chang Chang, Kuan‐Chang Chang, and co‐workers in article number 1700171, both COMSOL‐simulated electrical field and electrical measurements confirm the confined the electrical field by the surrounded high‐k spacer. The cross section views clearly show the different structures with a spacer.

中文翻译：

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电阻式随机存取存储器：使用高k间隔结构解决电阻式随机存取存储器中形成电压升高的缩放问题（Adv。Electron。Mater。9/2017）

通过引入新的高介电常数（high-k）材料作为侧壁隔离层结构，成功解决了按比例缩小的电阻式随机存取存储器（RRAM）器件单元不断上升的形成电压问题。正如张廷昌，张宽昌和他的同事在文章1700171中所报道的那样，COMSOL模拟的电场和电学测量值都证实了被包围的高k隔离层限制了电场。横截面图清楚地显示了带有垫片的不同结构。