Process-tolerant SiC ceramics were prepared by pressureless sintering at 1850–1950 °C for 2 h in an argon atmosphere with a new quaternary additive (Al₂O₃-Y₂O₃-CaO-SrO). The SiC ceramics can be sintered to a > 94% theoretical density at 1800–1950 °C by pressureless sintering. Toughened microstructures consisting of relatively large platelet grains and small equiaxed grains were obtained when SiC ceramics were sintered at 1850–1950 °C. The presently fabricated SiC ceramics showed little variability of the microstructure and mechanical properties with sintering within the temperature range of 1850–1950 °C, demonstrating process-tolerant behavior. The thermal conductivity of the SiC ceramics increased with increasing sintering temperature from 1800 °C to 1900 °C due to decreases of the lattice oxygen content of the SiC grains and residual porosity. The flexural strength, fracture toughness, and thermal conductivity of the SiC ceramics sintered at 1850–1950 °C were in the ranges of 444–457 MPa, 4.9–5.0 MPa m^1/2, and 76–82 Wm⁻¹ K⁻¹, respectively.

耐过程的SiC陶瓷是通过在氩气气氛中于1850–1950°C进行2 h的无压烧结，并使用一种新的四元添加剂（Al ₂ O ₃ -Y ₂ O ₃-CaO-SrO）。SiC陶瓷可通过无压烧结在1800-1950°C的条件下烧结至理论密度> 94％。当在1850–1950°C的温度下烧结SiC陶瓷时，获得了由相对较大的片状晶粒和较小的等轴晶粒组成的增韧微结构。目前制造的SiC陶瓷在1850–1950°C的温度范围内进行烧结时，其微观结构和机械性能几乎没有变化，证明了其耐工艺性。SiC陶瓷的热导率随着烧结温度从1800°C到1900°C的增加而增加，这是由于SiC晶粒的晶格含氧量减少和残余孔隙率所致。在1850–1950°C烧结的SiC陶瓷的弯曲强度，断裂韧性和导热系数在444–457 MPa，4.9–5的范围内。^分别为1/2和76-82 Wm ^-1  K ^-1。