Exploring the interactions between light and nanostructures contributes greatly to understanding and engineering nanoscale optical phenomena related to device performance. However, this often involves a compromise between uniformity and scalability. Given that optical properties, and especially light absorption, are governed by the geometries of nanostructures, this study investigated the correlation between light absorption and vertically aligned silicon nanowire (v-SiNW) arrays synthesized using KrF stepper lithography. Controlled growth experiments of the v-SiNW arrays indicated that their geometrical parameters strongly influence their corresponding light absorption properties, as confirmed by reflection measurements and finite difference time domain (FDTD) simulations, which showed specific wavelength-dependent absorption. Moreover, the extent of tapering the v-SiNW arrays was modulating to achieve broad absorption of visible light resulting from the gradual change in diameter and to optimize their optical characteristics, based on diameter-dependent nanophotonic resonance, for use in various applications.

中文翻译：

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在垂直排列的硅纳米线阵列中将光吸收与各种纳米结构的几何形状相关联

探索光与纳米结构之间的相互作用极大地有助于理解和工程化与器件性能相关的纳米级光学现象。但是，这通常涉及一致性和可伸缩性之间的折衷。考虑到光学特性（尤其是光吸收）受纳米结构的几何形状支配，本研究研究了使用KrF步进光刻法合成的光吸收与垂直排列的硅纳米线（v -SiNW）阵列之间的相关性。v的受控生长实验-SiNW阵列表明，其几何参数极大地影响了其相应的光吸收特性，这已通过反射测量和时差有限时域（FDTD）模拟得到了证实，后者显示了特定的波长依赖性吸收。此外，基于直径依赖性纳米光子共振，对v- SiNW阵列的渐缩程度进行调节以实现由直径的逐渐变化产生的可见光的广泛吸收并优化其光学特性，以用于各种应用中。