Phenylethenyl substituted 10-alkylphenoxazines were synthesized by a multi-step synthetic route. The derivatives were characterized by thermo-gravimetric analysis, differential scanning calorimetry, electron photoemission and time of flight technique. The materials were found to show very high thermal stability having initial thermal degradation temperatures in the range of 338–354 °C. Glass transition temperatures of the low molar mass materials were in the rage of 41–49 °C. The electron photoemission spectra of thin layers of the derivatives showed ionization potentials in the range of 5.16–5.3 eV. Hole drift mobility in thin layers of these derivatives ranged from 6 × 10⁻⁴ cm²V⁻¹s⁻¹ to 4.5 × 10⁻³ cm²V⁻¹s⁻¹ at high electric fields at room temperature. The synthesized materials have been tested as hole transporting layers in electroluminescent bilayer organic light emitting diodes with tris(quinolin-8-olato)aluminium as an emitter. The device with hole transporting layer comprised of 3,7-di(2-phenylethenyl)-10-(2-ethylhexyl)phenoxazine exhibited the best overall performance with low turn-on voltage of 2.8 V, a maximum photometric efficiency of about 3 cd/A and maximum brightness of 2160 cd/m². Taking the device at 1000 cd/m², the photometric efficiency was increased by 25%, as compared with that of PEDOT:PSS-based device.

通过多步合成途径合成了苯基乙烯基取代的10-烷基吩恶嗪。通过热重分析，差示扫描量热法，电子光发射和飞行时间技术对衍生物进行了表征。发现该材料显示出非常高的热稳定性，其初始热降解温度为338–354°C。低摩尔质量材料的玻璃化转变温度为41–49°C。衍生物薄层的电子光发射光谱显示出电离电势在5.16–5.3 eV的范围内。这些衍生物的薄层中的空穴漂移迁移率在6×10 ^-4 cm ² V ^-1 s ^-1至4.5×10 ^-3 cm的范围内 在室温下高电场下为² V ^-1 s ^-1。合成材料已经在三（quinolin-8-olato）铝作为发光体的电致发光双层有机发光二极管中作为空穴传输层进行了测试。具有由3,7-二（2-苯基乙烯基）-10-（2-乙基己基）吩恶嗪组成的空穴传输层的器件在2.8 V的低启动电压下表现出最佳的整体性能，最大光度效率约为3 cd / A和2160 cd / m ^2的最大亮度。与基于PEDOT：PSS的设备相比，以1000 cd / m ²的设备进行光度测量的效率提高了25％。