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Protecting a Diamond Quantum Memory by Charge State Control
Nano Letters ( IF 9.6 ) Pub Date : 2017-09-11 00:00:00 , DOI: 10.1021/acs.nanolett.7b01796
Matthias Pfender 1 , Nabeel Aslam 1 , Patrick Simon 2 , Denis Antonov 1 , Gergő Thiering 3, 4 , Sina Burk 1 , Felipe Fávaro de Oliveira 1 , Andrej Denisenko 1 , Helmut Fedder 1, 5 , Jan Meijer 6 , Jose A. Garrido 2, 7, 8 , Adam Gali 3, 4 , Tokuyuki Teraji 9 , Junichi Isoya 10 , Marcus William Doherty 11 , Audrius Alkauskas 12 , Alejandro Gallo 13 , Andreas Grüneis 13 , Philipp Neumann 1 , Jörg Wrachtrup 1, 13
Affiliation  

In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing. Prominent examples are the nitrogen-vacancy (NV) center in diamond, phosphorus dopants in silicon (Si:P), rare-earth ions in solids, and VSi-centers in silicon-carbide. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 4. Surprisingly, the new charge state allows switching of the optical response of single nodes facilitating full individual addressability.

中文翻译:

通过电荷状态控制保护钻石量子存储器

近年来,固态自旋系统已经成为量子信息处理的有前途的候选者。突出的例子是金刚石中的氮空位(NV)中心,硅中的磷掺杂剂(Si:P),固体中的稀土离子和V Si-以碳化硅为中心。Si:P系统已证明,通过消除掺杂剂的电子自旋,其核自旋可产生超长的自旋相干时间。但是,对于NV中心,尚未确定用于存储核自旋量子位相干性的适当电荷状态。在这里,我们通过利用核自旋量子位作为探针,将带正电荷的NV中心识别并表征为无电子自旋和光学惰性的状态。我们控制电荷并利用纳米级栅电极自旋。我们将核自旋相干时间延长了4倍。令人惊讶的是,新的电荷状态允许切换单个节点的光学响应,从而促进了完整的个人寻址能力。
更新日期:2017-09-11
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