Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the “sneaking current problem”, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaO_x-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm^–2), high selectivity (5 × 10⁴), low off-state current (~10 pA), robust endurance (>10¹⁰), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.

中文翻译：

---

基于梯形能带结构的高密度纳米交叉存储阵列的高度均匀和非线性选择装置

交叉开关阵列为实现两端子功能设备的高密度集成提供了一种经济高效的方法。然而，可能导致读取失败的“偷偷摸摸的电流问题”在纵横制阵列中是一个严峻的挑战。为了抑制未选择单元的潜行电流，必须集成单个选择设备。在这项工作中，我们报告了一种新颖的基于TaO _x的选择器，该选择器显示出通过调节氧化物中的缺陷浓度而形成的梯形能带结构。其显着特征包括高电流密度（1 MA·cm ^–2），高选择性（5×10 ⁴），低断态电流（〜10 pA），持久的耐用性（> 10 ¹⁰），自律性和出色的均匀性已成功实现。集成的单选单电阻（1S1R）器件在低电阻状态（LRS）中表现出很高的非线性度，在解决潜电流问题方面非常有效。