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Effect of interface on mid-infrared photothermal response of MoS 2 thin film grown by pulsed laser deposition
Nano Research ( IF 9.5 ) Pub Date : 2017-07-04 00:00:00 , DOI: 10.1007/s12274-017-1568-5
Ankur Goswami , Priyesh Dhandaria , Soupitak Pal , Ryan McGee , Faheem Khan , Željka Antić , Ravi Gaikwad , Kovur Prashanthi , Thomas Thundat

This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.

中文翻译:

界面对脉冲激光沉积生长的MoS 2薄膜的中红外光热响应的影响

这项研究报告了晶体(p型硅和c轴取向单晶蓝宝石)和非晶(Si / SiO 2和Si / SiN )上生长的多层MoS 2薄膜的中红外(mid-IR)光热响应)脉冲激光沉积(PLD)。将MoS 2膜的光热响应测量为当用中红外(7至8.2μm)光源照射时MoS 2膜的电阻变化。我们表明,增强MoS 2的电阻温度系数(TCR)薄膜通过控制经过的衬底和生长条件适当选择薄膜-衬底界面是可能的。使用X射线衍射,拉曼光谱,原子力显微镜,X射线光电子显微镜和透射电子显微镜对通过PLD生长的薄膜进行表征。高分辨率透射电子显微镜(HRTEM)图像显示,MoS 2膜以错配位错的逐层方式生长在蓝宝石衬底上。当膜在具有菱形立方结构的基板(例如硅)上生长时,由于双晶生长的形成,层的生长形态被破坏。在诸如Si / SiO 2或Si / SiN的非晶衬底上的生长形态非常不同。PLD生长的MoS 2与PLD-PLD-PLD和PLD-PLD-PLD相比,硅薄膜都显示出更高的TCR(在2.9 K时为-2.9%K -1),更高的中红外灵敏度(ΔR / R = 5.2%)和更高的响应度(8.7 V·W –1)。在其他基材上生长的薄膜以及将机械剥离的MoS 2薄片转移到不同的基材上。
更新日期:2017-09-09
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