A computer controlled, automated synthesis method has been used to grow HgTe quantum dots (QDs) entirely at room temperature, using an aprotic solvent, dimethyl sulfoxide. The growth is carried out with small iterative additions of the Te precursor, which allows frequent sampling of the products to assess the growth trajectory in terms of the relationship between the QD concentration and QD diameters as the reaction proceeds. As such, this approach is a useful tool to develop a detailed understanding of the growth process and to work toward optimizing the reaction conditions in terms of the quality of the resulting QDs. HgTe QDs with emission spectra ranging up to 3000 nm and with photoluminescence quantum yields of up to 17% at 2070 nm have been produced by this method. Although coupling of the exciton to ligand vibrations is inevitable in this energy range, attention to the growth conditions and QD quality can influence the detailed coupling mechanisms, with fewer carrier traps reducing the extent of polaron mediated coupling. The influence of reaction conditions such as ligand-to-cation ratios and rate of Te precursor addition upon the onset of QD aggregation has been also examined. The method is readily up-scalable and has been employed to produce HgTe QD materials for infrared photodetectors.

中文翻译：

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在非质子溶剂中室温合成HgTe量子点，在红外中实现高光致发光量子产率

已使用计算机控制的自动合成方法，使用质子惰性溶剂二甲基亚砜在室温下完全生长HgTe量子点（QD）。用少量的Te前体反复添加进行生长，这允许频繁取样产物以随着反应的进行根据QD浓度和QD直径之间的关系来评估生长轨迹。因此，此方法是一种有用的工具，可用于深入了解生长过程并根据生成的QD的质量优化反应条件。通过这种方法可以制备出发射光谱范围高达3000 nm，光致发光量子产率在2070 nm范围内达到17％的HgTe QD。尽管在此能量范围内激子与配体振动的耦合是不可避免的，但对生长条件和量子点质量的关注会影响详细的耦合机制，较少的载流子陷阱会减少极化子介导的耦合程度。还检查了反应条件（例如配体与阳离子的比率和Te前体的添加速率）对QD聚集开始的影响。该方法易于升级，已被用于生产用于红外光电探测器的HgTe QD材料。还检查了反应条件（例如配体与阳离子的比率和Te前体的添加速率）对QD聚集开始的影响。该方法易于升级，已被用于生产用于红外光电探测器的HgTe QD材料。还检查了反应条件（例如配体与阳离子的比率和Te前体的添加速率）对QD聚集开始的影响。该方法易于升级，已被用于生产用于红外光电探测器的HgTe QD材料。