This study reports an effective amidine‐type n‐dopant of 1,8‐Diazabicyclo[5.4.0]undec‐7‐ene (DBU) that can universally dope electron acceptors, including PC₆₁BM, N2200, and ITIC, by mixing the dopant with the acceptors in organic solvents or exposing the acceptor films in the dopant vapor. The doping mechanism is due to its strong electron‐donating property that is also confirmed via the chemical reduction of PEDOT:PSS (yielding color change). The DBU doping considerably increases the electrical conductivity and shifts the Fermi levels up of the PC₆₁BM films. When the DBU‐doped PC₆₁BM is used as an electron‐transporting layer in perovskite solar cells, the n‐doping removes the “S‐shape” of J–V characteristics, which leads to the fill factor enhancement from 0.54 to 0.76. Furthermore, the DBU doping can effectively lower the threshold voltage and enhance the electron mobility of PC₆₁BM‐based n‐channel field‐effect transistors. These results show that the DBU can be a promising n‐dopant for solution‐processed electronics.

中文翻译：

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用于溶液处理的场效应晶体管和钙钛矿太阳能电池的Am型n掺杂剂

这项研究报告了一种有效的1,8-二氮杂双环[5.4.0]十一碳7烯（DBU）的am型正掺杂剂，它可以通过混合以下元素来普遍掺杂电子受体，包括PC ₆₁ BM，N2200和ITIC。在有机溶剂中将受主与掺杂剂混合，或将受主膜暴露在掺杂剂蒸气中。掺杂机理归因于其强大的供电子特性，这也可以通过PEDOT：PSS的化学还原（变色）得到证实。DBU掺杂大大提高了电导率，并使PC ₆₁ BM膜的费米能级向上移动。当将DBU掺杂的PC ₆₁ BM用作钙钛矿太阳能电池中的电子传输层时，n掺杂会去除J – V的“ S形”。特性，导致填充系数从0.54提高到0.76。此外，DBU掺杂可以有效降低阈值电压并增强基于PC ₆₁ BM的n沟道场效应晶体管的电子迁移率。这些结果表明，DBU可以成为解决方案处理电子产品的有希望的掺杂剂。