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Realizing p-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions
The Journal of Physical Chemistry B ( IF 2.8 ) Pub Date : 2017-09-07 00:00:00 , DOI: 10.1021/acs.jpcb.7b06379 Shuang Kong 1, 2 , Tianmin Wu 3, 4 , Wei Zhuang 3 , Peng Jiang 1 , Xinhe Bao 1
The Journal of Physical Chemistry B ( IF 2.8 ) Pub Date : 2017-09-07 00:00:00 , DOI: 10.1021/acs.jpcb.7b06379 Shuang Kong 1, 2 , Tianmin Wu 3, 4 , Wei Zhuang 3 , Peng Jiang 1 , Xinhe Bao 1
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Two-dimensional transition-metal dichalcogenide semiconductors (TMDCs) such as MoS2 are attracting increasing interest as thermoelectric materials owing to their abundance, nontoxicity, and promising performance. Recently, we have successfully developed n-type MoS2 thermoelectric material via oxygen doping. Nevertheless, an efficient thermoelectric module requires both n-type and p-type materials with similar compatibility factors. Here, we present a facile approach to obtain a p-type MoS2 thermoelectric material with a maximum figure of merit of 0.18 through the introduction of VMo2S4 as a second phase by vanadium doping. VMo2S4 nanoinclusions, confirmed by X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) measurements, not only improve the electrical conductivity by simultaneously increasing the carrier concentration and the mobility but also result in the reduction of lattice thermal conductivity by enhancing the interface phonon scattering. Our studies not only shed new light toward improving thermoelectric performance of TMDCs by a facile elemental doping strategy but also pave the way toward thermoelectric devices based on TMDCs.
中文翻译：
通过嵌入VMo 2 S 4纳米夹杂物来实现具有增强的热电性能的p型MoS 2
诸如MoS 2之类的二维过渡金属二硫化氢半导体（TMDC）由于其含量丰富，无毒且性能良好而作为热电材料吸引了越来越多的关注。最近，我们已经通过氧掺杂成功地开发了n型MoS 2热电材料。然而，有效的热电模块需要具有相似相容性因子的n型和p型材料。在这里，我们提出一种简便的方法，通过钒掺杂引入作为第二相的VMo 2 S 4来获得最大品质因数为0.18的p型MoS 2热电材料。VMo 2 S 4通过X射线粉末衍射（XRD）和透射电子显微镜（TEM）测量证实的纳米夹杂物，不仅可以通过同时增加载流子浓度和迁移率来提高电导率，还可以通过增强界面来降低晶格热导率声子散射。我们的研究不仅为通过简便的元素掺杂策略改善TMDC的热电性能提供了新的思路，而且为基于TMDC的热电设备铺平了道路。
更新日期：2017-09-07
中文翻译：
通过嵌入VMo 2 S 4纳米夹杂物来实现具有增强的热电性能的p型MoS 2
诸如MoS 2之类的二维过渡金属二硫化氢半导体（TMDC）由于其含量丰富，无毒且性能良好而作为热电材料吸引了越来越多的关注。最近，我们已经通过氧掺杂成功地开发了n型MoS 2热电材料。然而，有效的热电模块需要具有相似相容性因子的n型和p型材料。在这里，我们提出一种简便的方法，通过钒掺杂引入作为第二相的VMo 2 S 4来获得最大品质因数为0.18的p型MoS 2热电材料。VMo 2 S 4通过X射线粉末衍射（XRD）和透射电子显微镜（TEM）测量证实的纳米夹杂物，不仅可以通过同时增加载流子浓度和迁移率来提高电导率，还可以通过增强界面来降低晶格热导率声子散射。我们的研究不仅为通过简便的元素掺杂策略改善TMDC的热电性能提供了新的思路，而且为基于TMDC的热电设备铺平了道路。
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