Defect Engineering for Realizing High Thermoelectric Performance in n-Type Mg3Sb2-Based Materials,ACS Energy Letters

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Defect Engineering for Realizing High Thermoelectric Performance in n-Type Mg3Sb2-Based Materials
ACS Energy Letters ( IF 19.3 ) Pub Date : 2017-09-07 00:00:00 , DOI: 10.1021/acsenergylett.7b00742
Jun Mao _{1,

2} , Yixuan Wu ₃ , Shaowei Song ₁ , Qing Zhu ₁ , Jing Shuai ₁ , Zihang Liu ₁ , Yanzhong Pei ₃ , Zhifeng Ren ₁

Affiliation

Point defects, which scatter electronic carriers as well as phonons, play a vital role in the transport properties of thermoelectric materials. Therefore, defect engineering can be utilized for tuning thermoelectric properties. Mg vacancies, as the dominant defects in the n-type Mg₃Sb₂-based materials, can greatly impact the transport properties of this compound. Here we demonstrate that the Mg vacancies in the n-type Mg₃Sb₂-based materials can be successfully manipulated by simply tuning the preparation conditions. A substantial enhancement in the Hall mobility is obtained, from ∼39 to ∼128 cm² V^–1 s^–2, an increase of ∼228%. The significantly improved Hall mobility noticeably boosts the power factor from ∼6 to ∼20 μW cm^–1 K^–2 and effectively enhances the thermoelectric figure of merit. Our results demonstrate that defect engineering could be very effective in improving the thermoelectric performance of n-type Mg₃Sb₂-based materials.

中文翻译：

在n型Mg ₃ Sb _2基材料中实现高热电性能的缺陷工程

分散电子载体和声子的点缺陷在热电材料的传输特性中起着至关重要的作用。因此，缺陷工程可用于调节热电性能。作为n型基于Mg ₃ Sb ₂的材料中的主要缺陷，Mg空位会极大地影响该化合物的传输性能。在这里，我们证明了通过简单地调整制备条件就可以成功地控制基于n型Mg ₃ Sb ₂的材料中的Mg空位。霍尔迁移率从39到128 cm ²  V ^–1  s ^{–2显着提高}，增加约228％。霍尔迁移率的显着提高将功率因数从大约6提高到大约20μWcm ^–1  K ^–2，并有效地提高了热电性能。我们的结果表明，缺陷工程可以非常有效地改善n型Mg ₃ Sb ₂基材料的热电性能。

更新日期：2017-09-07

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