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Enhanced Electronic Properties of SnO2 via Electron Transfer from Graphene Quantum Dots for Efficient Perovskite Solar Cells
ACS Nano ( IF 15.8 ) Pub Date : 2017-09-06 00:00:00 , DOI: 10.1021/acsnano.7b04070
Jiangsheng Xie 1 , Kun Huang 1 , Xuegong Yu 1 , Zhengrui Yang 1 , Ke Xiao 2 , Yaping Qiang 2 , Xiaodong Zhu 1 , Lingbo Xu 2 , Peng Wang 2 , Can Cui 2 , Deren Yang 1
Affiliation  

Tin dioxide (SnO2) has been demonstrated as an effective electron-transporting layer (ETL) for attaining high-performance perovskite solar cells (PSCs). However, the numerous trap states in low-temperature solution processed SnO2 will reduce the PSCs performance and result in serious hysteresis. Here, we report a strategy to improve the electronic properties in SnO2 through a facile treatment of the films with adding a small amount of graphene quantum dots (GQDs). We demonstrate that the photogenerated electrons in GQDs can transfer to the conduction band of SnO2. The transferred electrons from the GQDs will effectively fill the electron traps as well as improve the conductivity of SnO2, which is beneficial for improving the electron extraction efficiency and reducing the recombination at the ETLs/perovskite interface. The device fabricated with SnO2:GQDs could reach an average power conversion efficiency (PCE) of 19.2 ± 1.0% and a highest steady-state PCE of 20.23% with very little hysteresis. Our study provides an effective way to enhance the performance of perovskite solar cells through improving the electronic properties of SnO2.

中文翻译:

高效钙钛矿太阳能电池通过石墨烯量子点的电子转移增强SnO 2的 电子性能

二氧化锡(SnO 2)已被证明是一种用于获得高性能钙钛矿太阳能电池(PSC)的有效电子传输层(ETL)。但是,低温固溶处理的SnO 2中的大量陷阱状态会降低PSC的性能,并导致严重的滞后现象。在这里,我们报告了通过添加少量石墨烯量子点(GQDs)轻松处理薄膜来改善SnO 2中电子性能的策略。我们证明,GQDs中的光生电子可以转移到SnO 2的导带。从GQD转移的电子将有效填充电子陷阱,并提高SnO 2的电导率,这对于提高电子提取效率和减少ETL /钙钛矿界面处的重组是有益的。用SnO 2:GQDs制成的器件可以达到19.2±1.0%的平均功率转换效率(PCE)和20.23%的最高稳态PCE,并且几乎没有磁滞。我们的研究提供了一种通过改善SnO 2的电子性能来增强钙钛矿型太阳能电池性能的有效方法。
更新日期:2017-09-06
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