Ba1+1/M[Si2O5+1/M] low-permittivity microwave dielectric ceramics are prepared using the conventional solid-state method. Pure phases are obtained in barium silicates with M=1, 3, 4, 5, and ∞, except for M=7, in which two phases, Ba5Si8O21 and BaSi2O5, are observed. As the complexity of the crystal structure described by the Shannon information per reduced unit cell increases, the τf value tends to change from a negative to a positive value, except for M=5, which has the highest complexity. A single Ba5Si8O21 phase with er anomaly peak at −180 °C exhibits a rare positive τf value (+25 ppm/°C), which is a novel temperature compensator. This article is protected by copyright. All rights reserved.

中文翻译：

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不同Ba/Si比硅酸钡微波介质陶瓷的可控τf值

Ba1+1/M[Si2O5+1/M] 低介电常数微波介质陶瓷采用常规固态方法制备。在 M=1、3、4、5 和 ∞ 的硅酸钡中获得纯相，除了 M=7，其中观察到 Ba5Si8O21 和 BaSi2O5 两相。随着每个减少的晶胞的香农信息描述的晶体结构的复杂性增加，τf 值趋向于从负值变为正值，除了 M=5，其具有最高的复杂性。单个 Ba5Si8O21 相在 -180°C 处具有 er 异常峰，表现出罕见的正 τf 值 (+25 ppm/°C)，这是一种新型的温度补偿器。本文受版权保护。版权所有。