NiMn₂O_4+δ thermistor thick films have been successfully deposited by the so-called Aerosol Deposition Method (ADM) at room temperature on alumina substrates, Si-wafers, as well as on special planar four-wire interdigital electrode structures for high-precision electrical characterization. The NTCR films are homogeneous, completely dense and scratch resistant. Both as-deposited and tempered, the NTCR films exhibit a cubic spinel structure. Between 25 °C and 90 °C, the NTCR film resistance behaves as it is typical for variable range hopping (VRH) with parabolic density of states. As a result of moderate film tempering, the thermistor constant B and the specific resistance at 25 °C (ρ₂₅) decrease from 4250 K to 4020 K and 65 Ω·m to 40 Ω·m respectively, and are close to bulk values. In combination with the excellent reproducibility of the ρ₂₅ and B values, AD processing of films appears to be a promising alternative for classical ceramic bulk processes.

NiMn ₂ O _{4 +δ}热敏电阻厚膜已通过所谓的气溶胶沉积法（ADM）在室温下成功地沉积在氧化铝基板，硅晶片以及特殊的平面四线叉指式电极结构上，以实现高电阻率。精密的电气特性。NTCR薄膜均匀，完全致密且耐刮擦。无论是沉积的还是回火的，NTCR膜均显示立方尖晶石结构。在25°C至90°C之间，NTCR膜电阻的行为与具有抛物线状态密度的可变范围跳变（VRH）的典型情况相同。为中等薄膜回火，热敏电阻常数的结果乙并在25℃下的电阻率（ρ ₂₅）分别从4250 K减小到4020 K，从65Ω·m减小到40Ω·m，并且接近体积值。与所述的优异的再现性组合ρ ₂₅和乙值，薄膜的AD处理似乎是经典的陶瓷本体方法有希望的替代物。