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Improving Wearable Photodetector Textiles via Precise Energy Level Alignment and Plasmonic Effect
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-09-01 , DOI: 10.1002/aelm.201700281 Zhengfeng Zhu 1 , Yu Gu 1 , Shalong Wang 1 , Yousheng Zou 1 , Haibo Zeng 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-09-01 , DOI: 10.1002/aelm.201700281 Zhengfeng Zhu 1 , Yu Gu 1 , Shalong Wang 1 , Yousheng Zou 1 , Haibo Zeng 1
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Light‐weight and ultraflexible‐fiber‐based devices that can be woven into wearable electronic products have attracted extensive attention in recent years. However, fiber‐shaped photodetectors (PDs) made from bulky metal‐wire‐based inorganic semiconductors are prone to damage with excessive bending. Therefore, this work introduces a directly constructed photodetector textile (PDT) and realizes a large‐area, organized and dense weaving of fiber‐shaped PDs for the first time. To form the structure, ZnO nanorod arrays (NRAs) are grown uniformly on the surface of Ni wire textile to fabricate an Ni‐based ZnO NRA textile, then Ag nanowires (NWs) and graphene film (outmost layer) are successively assembled on the functional textile. The precise energy level alignment of the structure is in favor of the separation and transportation of photoinduced carriers, and Ag NWs also bring about near‐filed enhancement effect on ZnO NRAs due to local surface plasmon resonances, leading to excellent device performance. The photoresponsivity under bias of 1 V is 0.27 A W−1, and the Ilight/Idark ratio calculated form the I–V curves even reaches ≈102, about two orders of magnitude larger than that of the reported fiber‐shaped PDs. Meanwhile, the whole structure also exhibits excellent durability under bending operations, which is ideal for wearable applications.
中文翻译：
通过精确的能级对准和等离子效应改善可穿戴光电探测器纺织品
可以编织到可穿戴电子产品中的轻巧，超柔韧性的纤维设备近年来引起了广泛的关注。但是，由笨重的基于金属丝的无机半导体制成的纤维状光电探测器（PD）容易因过度弯曲而损坏。因此，这项工作首次引入了直接构建的光电探测器织物（PDT），并首次实现了纤维状PD的大面积，有组织且密集的编织。为了形成该结构，ZnO纳米棒阵列（NRA）在镍丝纺织物的表面上均匀生长以制造基于Ni的ZnO NRA纺织物，然后依次将Ag纳米线（NWs）和石墨烯膜（最外层）组装在功能层上纺织品。结构的精确能级对准有利于光诱导载流子的分离和运输，并且由于局部表面等离子体激元共振，Ag NW还对ZnO NRA产生近乎增强的增强作用，从而导致出色的器件性能。在1 V偏压下的光敏度为0.27 AW-1，并且我光/我暗比计算形式的I-V曲线甚至达到≈10 2，大约比所报道的纤维状PD的较大的两个数量级。同时，整个结构在弯曲操作下也具有出色的耐用性，非常适合可穿戴应用。
更新日期：2017-09-01
中文翻译：
通过精确的能级对准和等离子效应改善可穿戴光电探测器纺织品
可以编织到可穿戴电子产品中的轻巧，超柔韧性的纤维设备近年来引起了广泛的关注。但是，由笨重的基于金属丝的无机半导体制成的纤维状光电探测器（PD）容易因过度弯曲而损坏。因此，这项工作首次引入了直接构建的光电探测器织物（PDT），并首次实现了纤维状PD的大面积，有组织且密集的编织。为了形成该结构，ZnO纳米棒阵列（NRA）在镍丝纺织物的表面上均匀生长以制造基于Ni的ZnO NRA纺织物，然后依次将Ag纳米线（NWs）和石墨烯膜（最外层）组装在功能层上纺织品。结构的精确能级对准有利于光诱导载流子的分离和运输，并且由于局部表面等离子体激元共振，Ag NW还对ZnO NRA产生近乎增强的增强作用，从而导致出色的器件性能。在1 V偏压下的光敏度为0.27 AW-1，并且我光/我暗比计算形式的I-V曲线甚至达到≈10 2，大约比所报道的纤维状PD的较大的两个数量级。同时，整个结构在弯曲操作下也具有出色的耐用性，非常适合可穿戴应用。
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