Lead titanate (PTO) films were deposited onto Pt/Ti/SiO₂/Si substrates by a sol-gel method and annealed by microwave irradiation and conventional heating. In contrast to conventional heating, microwave irradiation can crystallize the PTO films at a low temperature of 450 °C or at 550 °C for only 5 min. The XRD and TEM studies reveal that microwave radiation can reduce the nucleation time, and increase the growth rate of perovskite grains in the crystallization process. Moreover, the results using the Avrami’s model show that the effective activation energy for crystallization process by microwave irradiation is 131 kJ/mol, much lower than that for the PTO films by conventional heating (216 kJ/mol). Therefore, microwave irradiation can reduce the effective activation energy for the nucleation and grain growth of the perovskite phase during the crystallization process, contributing to a low-temperature or a short-time preparation process of ferroelectric films.

钛酸铅（PTO）膜沉积在Pt / Ti / SiO _2上/ Si基板采用溶胶-凝胶法，并通过微波辐照和常规加热进行退火。与常规加热相反，微波辐射可使PTO膜在450°C或550°C的低温下仅结晶5分钟。XRD和TEM研究表明，微波辐射可以减少晶化时间，并增加结晶过程中钙钛矿晶粒的生长速率。此外，使用Avrami模型的结果表明，微波辐照结晶过程的有效活化能为131 kJ / mol，远低于常规加热的PTO膜的活化能（216 kJ / mol）。因此，微波辐射可降低结晶过程中钙钛矿相的形核和晶粒生长的有效活化能，