Monolayers: Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices (Adv. Mater. 33/2017),Advanced Materials

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Monolayers: Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices (Adv. Mater. 33/2017)
Advanced Materials ( IF 27.4 ) Pub Date : 2017-09-01 , DOI: 10.1002/adma.201770236
Juwon Lee ₁ , Sangyeon Pak ₁ , Paul Giraud ₁ , Young-Woo Lee ₁ , Yuljae Cho ₁ , John Hong ₁ , A-Rang Jang ₁ , Hee-Suk Chung ₂ , Woong-Ki Hong ₂ , Hu Young Jeong ₃ , Hyeon Suk Shin ₄ , Luigi G. Occhipinti ₅ , Stephen M. Morris ₁ , SeungNam Cha ₁ , Jung Inn Sohn ₁ , Jong Min Kim ₅

Affiliation

A novel synthesis approach for high‐quality, large‐scale transition‐metal dichalcogenide monolayers is developed by SeungNam Cha, Jung Inn Sohn, and co‐workers, as described in article number 1702206. The low supersaturation level, triggered by the evaporation of an extremely thin precursor layer, reduces the nucleation density dramatically under a thermodynamically stable environment, yielding uniform and clean large‐area monolayer films. The vertically stacked heterostructured device shows a fast response time and a high photoresponsivity.

中文翻译：

单层：大型且高度结晶的过渡金属双硫族化物单层及其单极n–n异质结器件的热力学稳定合成（Adv。Mater。33/2017）

如SeungNam Cha，Jung Inn Sohn和他的同事们开发的一种高质量，大规模过渡金属二硫化二硅单层的新颖合成方法，如文章编号1702206所述。极薄的前体层，在热力学稳定的环境下可显着降低成核密度，从而产生均匀且清洁的大面积单层膜。垂直堆叠的异质结构器件显示出快速响应时间和高光响应性。

更新日期：2017-09-01

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