Experimental study on one evaporation process to deposit MoO₂ microflakes on SiO₂/Si substrate is reported. A chemical mechanism based on disproportionation reaction has been suggested and oxides MoO_3-x been found to be active precursors. As-prepared rhomboidal crystals have large sizes and high crystallinity, the size lengths of which can excess 200 μm and thicknesses of which are 20-100 nm. Uniform MoS₂ films can grow on their surfaces in suitable sulfuration process. The fine crystallinity, low evaporation rate and conductive property of these MoO₂ crystals make them potential alternative precursor/substrate for growth of 2D chalcogenides MoX₂ (X = S, Se, Te).

中文翻译：

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MoO ₂微粒沉积的蒸发过程实验研究

报道了一种在SiO ₂ / Si衬底上沉积MoO ₂微米薄片的蒸发工艺的实验研究。已经提出了基于歧化反应的化学机理，并且发现氧化物MoO _3-x是活性前体。所制备的菱形晶体具有大尺寸和高结晶度，其尺寸长度可以超过200μm，并且其厚度为20-100nm。均匀的MoS ₂薄膜可以在适当的硫化过程中在其表面上生长。这些MoO ₂晶体的优良结晶度，低蒸发速率和导电特性使其成为2D硫族化物MoX ₂（X = S，Se，Te）生长的潜在替代前体/衬底。