Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device,Small

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Four‐Bits‐Per‐Cell Operation in an HfO2‐Based Resistive Switching Device
Small ( IF 13.0 ) Pub Date : 2017-08-30 , DOI: 10.1002/smll.201701781
Gun Hwan Kim ₁ , Hyunsu Ju ₂ , Min Kyu Yang ₃ , Dong Kyu Lee ₄ , Ji Woon Choi ₁ , Jae Hyuck Jang ₅ , Sang Gil Lee ₅ , Ik Su Cha ₂ , Bo Keun Park ₁ , Jeong Hwan Han ₁ , Taek-Mo Chung ₁ , Kyung Min Kim ₆ , Cheol Seong Hwang ₇ , Young Kuk Lee ₁

Affiliation

The quadruple‐level cell technology is demonstrated in an Au/Al₂O₃/HfO₂/TiN resistance switching memory device using the industry‐standard incremental step pulse programming (ISPP) and error checking/correction (ECC) methods. With the highly optimistic properties of the tested device, such as self‐compliance and gradual set‐switching behaviors, the device shows 6σ reliability up to 16 states with a state current gap value of 400 nA for the total allowable programmed current range from 2 to 11 µA. It is demonstrated that the conventional ISPP/ECC can be applied to such resistance switching memory, which may greatly contribute to the commercialization of the device, especially competitively with NAND flash. A relatively minor improvement in the material and circuitry may enable even a five‐bits‐per‐cell technology, which can hardly be imagined in NAND flash, whose state‐of‐the‐art multiple‐cell technology is only at three‐level (eight states) to this day.

中文翻译：

基于HfO2的电阻开关设备中的每单元四位操作

在Au / Al ₂ O ₃ / HfO _2中展示了四级电池技术/ TiN电阻开关存储设备，使用行业标准的增量步进脉冲编程（ISPP）和错误检查/校正（ECC）方法。凭借被测设备的高度乐观特性，例如自律性和渐进式设置切换行为，该设备在16种状态下均显示6σ可靠性，状态电流间隙值为400 nA，允许的总编程电流范围为2至2。 11 µA。已经证明，传统的ISPP / ECC可以应用于这种电阻切换存储器，这可以极大地促进设备的商业化，特别是与NAND闪存竞争。材料和电路的相对较小的改进甚至可以实现每单元五位技术，这在NAND闪存中很难想象，

更新日期：2017-08-30

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